An investigation was made of B diffusion following ultra low-energy implantation. Secondary ion mass spectrometric measurements revealed that the B diffusion was transiently enhanced. Simulations were based on a kick-out model which required only 2 uncorrelated parameters in order to describe the microscopic processes which were involved. By optimizing the parameters, excellent agreement between simulated and experimental profile broadenings was obtained. An extension of a previous model, which accounted for interstitial cluster formation and dissolution, was incorporated in order to achieve a better description of B diffusion.

An Investigation of the Modelling of Ultra-Low Energy Implanted Boron in Silicon. G.Mannino, S.Whelan, E.Schroer, V.Privitera, P.Leveque, B.G.Svensson, E.Napolitani: Journal of Applied Physics, 2001, 89[10], 5381-5