The diffusion of B impurity into the walls of macro-porous samples with a regular pattern of deep cylindrical pores was studied. The layers which were obtained had a depth of 150 to 250μm, were quasi-uniformly doped and were characterized by a flat diffusion front. The electrical parameters were very similar to those of doped non-porous crystals.

Deep Diffusion Doping of Macro-Porous Silicon. E.V.Astrova, V.B.Voronkov, I.V.Grekhov, A.V.Nashchekin, A.G.Tkachencko: Physica Status Solidi A, 2000, 182[1], 145-50