Samples which had been ion-implanted with B, to energies of below 3keV, were annealed athermally. The annealing process was characterized by using secondary ion mass spectrometry and infra-red absorption spectroscopy. The athermally annealed samples exhibited an activation which was comparable to that for thermally annealed samples; but with much less B diffusion. Activation in the athermally annealed samples was shown to be much higher than that which would have been achieved by recrystallization of the amorphous layer.

Athermal Annealing of Low-Energy Boron Implants in Silicon. D.W.Donnelly, B.C.Covington, J.Grun, R.P.Fischer, M.Peckerar, C.L.Felix: Applied Physics Letters, 2001, 78[14], 2000-2