Marker-layer B structures were used to analyze the ramp-rate dependence of transient enhanced dopant diffusion during the rapid thermal annealing of implantation damage. Short anneals were used, with ramp-rates ranging from 0.1 to 350C/s, and peak temperatures ranging from 900 to 1100C. Increasing the ramp rate was found to reduce the amount of profile broadening which was caused by transient enhanced diffusion, and to reduce normal diffusion. The results showed why high ramp-rates led to improved B-implant activation and junction-depth control. An Ostwald ripening model for interstitial-cluster evolution explained detailed trends in the data, and predicted further possible improvements in the case of ultra-rapid annealing.

Effect of Heating Ramp Rates on Transient Enhanced Diffusion in Ion-Implanted Silicon. G.Mannino, P.A.Stolk, N.E.B.Cowern, W.B.de Boer, A.G.Dirks, F.Roozeboom, J.G.M.van Berkum, P.H.Woerlee, N.N.Toan: Applied Physics Letters, 2001, 78[7], 889-91