The 2-dimensional profiles of ultra-low energy B implants were studied after diffusion by using scanning capacitance microscopy and a double bevelling technique which enhanced the depth and lateral resolution. Patterned wafers having feature sizes ranging from 0.8 to 5μm were implanted. It was demonstrated that enhanced B transient diffusion was markedly reduced upon decreasing the feature size to below about 2μm. This effect was attributed to an increasing effect of interstitial lateral out-diffusion below the SiO2 mask.

Two-Dimensional Profiling and Size Effects on the Transient Enhanced Diffusion of Ultra Low-Energy B Implants in Si. F.Giannazzo, F.Priolo, V.Raineri, V.Privitera: Applied Physics Letters, 2001, 78[5], 598-600