Simulations were made of transient enhanced diffusion in the presence of end-of-range defects which were produced by Ge amorphization followed by BF2+ implantation. Ostwald ripening of the end-of-range defects was taken into account. A comparison of annealed profiles with the equivalent B+ implantation version showed that existing models were insufficient for simulating BF2+ experimental profiles when the B diffusion depth was very low. It was proposed that F could act as a sink for interstitial B and therefore reduced the B diffusion depth which was required in order to obtain a good approximation to experimental profiles.

Modelling of the Transient Enhanced Diffusion of Boron Implanted into Pre-Amorphized Silicon: the Case of BF2+ Implantation. A.Dusch, J.Marcon, K.Masmoudi, F.Olivie, M.Benzohra, K.Ketata, M.Ketata: Materials Science and Engineering B, 2001, 80[1-3], 65-7