A method was developed, for the investigation of the transient enhanced diffusion of implanted B, by monitoring the redistribution of buried B isotopes in the implanted region. The buried layer was created by 10B+ implantation, and damage was introduced by 11B+ implantation using various doses. Following low-dose ion implantation, the implanted dopants exhibited a similar transient enhanced diffusion behavior as embedded dopants. For implantation doses above 5 x 1014/cm2, up-hill diffusion of 10B near to the immobile 11B peak indicated the presence of transient enhanced diffusion under B interstitial clustering. Transient enhanced diffusion persisted in the projected range for high-dose implantation at 25keV; even though dense dislocations existed. However, as the implantation energy was decreased to 15keV, the occurrence of transient enhanced diffusion shifted from the surface to the projected range.

Observation of Transient Enhanced Diffusion in B+-Implanted Si via Buried Boron Isotopes. R.D.Chang, H.P.Chiang, H.W.Liu, L.W.Ho, P.C.Chiang, J.R.Tsai, J.Lin: Japanese Journal of Applied Physics - 1, 2000, 39[11], 6136-8