The diffusion of ultra low-energy implanted B, during post-implantation annealing, was simulated. When the B concentration was less than 1021/cm3, the experimental B depth-profiles could be fitted by using a model which took account of B segregation to surface oxide. When the B concentration was greater than 1021/cm3, the simulation underestimated the extent of diffusion. This discrepancy was attributed to the effect of B-enhanced diffusion. Self-interstitial emission from a boride layer in high-B regions was also taken into account, and the simulation reproduced well the experimental profiles.

Diffusion Simulation of Ultra Low-Energy Implanted Boron in Silicon. M.Uematsu: Japanese Journal of Applied Physics - 2, 2000, 39[9A/B], L895-7