It was noted that B exhibited anomalous diffusion during the initial phases of ion implantation annealing. Transient enhanced B diffusion was characterized by enhanced tail diffusion, together with an electrically inactive immobile peak. The latter peak was due to B clustering in the presence of excess interstitials which also enhanced B diffusion in the tail region. A simple model, based upon atomistic calculations, was presented for the formation of immobile B interstitial clusters and associated point defect interactions.

A Simple Continuum Model for Boron Clustering Based on Atomistic Calculations. S.Chakravarthi, S.T.Dunham: Journal of Applied Physics, 2001, 89[7], 3650-5