A systematic work was carried out in order to optimize sample preparation and scanning capacitance microscopy on double beveled samples. The method permitted the enhancement of depth and lateral resolution and it was used to characterize 2-dimensional profiles of ultra-low energy B implants in Si after diffusion. Implants were performed into patterned wafers with different stripe widths ranging from 0.5 to 5µm. B transient enhanced diffusion was strongly reduced with decreasing feature size below about 2 µm. This effect was related to the high interstitial diffusivity with respect to B. It was even enlarged for lateral diffusion due to the interstitial recombination under the SiO2 mask at the Si/SiO2 interface.

Two-Dimensional Effects on Ultralow Energy B Implants in Si. F.Giannazzo, F.Priolo, V.Raineri, V.Privitera, A.Picariello, A.Battaglia, S.Moffat: Journal of Vacuum Science and Technology B, 2002, 20[1], 414-8