The Si samples used here contained a sequence of alternating B and Sb spikes grown by molecular beam epitaxy. These samples were irradiated with 2.5MeV protons at 580 to 830C and characterized by secondary-ion mass spectrometry. The energy of the proton beam was chosen such that the generation rate of point defects could be considered to be uniform throughout the delta-doped layers. For each sample, the B diffusion coefficient was increased under irradiation; as compared to its diffusivity in unirradiated areas. The B diffusion coefficient increased as the irradiation temperature was increased.

Influence of Boron on Radiation Enhanced Diffusion of Antimony in Delta-Doped Silicon. P.Lévêque, J.S.Christensen, A.Y.Kuznetsov, B.G.Svensson, A.Nylandsted Larsen: Journal of Applied Physics, 2002, 91[7], 4073-7