Previous work had indicated that the suppression of B transient enhanced diffusion in C-rich Si was caused by non-equilibrium Si point defect concentrations, specifically the undersaturation of Si self-interstitials, that result from the coupled out-diffusion of C interstitials via the kick-out and Frank–Turnbull reactions. This study of B transient enhanced diffusion reduction in Si1–x–yGexCy during 750C inert anneals revealed that the use of an additional reaction which further reduced the Si self-interstitial concentration was required in order to describe accurately the time-evolved diffusion behavior of B. A comprehensive model was presented here which included {311} defects, B-interstitial clusters, a C kick-out reaction, a C Frank–Turnbull reaction, and a C interstitial-C substitutional (CiCs) pairing reaction that successfully simulates C suppression of B transient enhanced diffusion at 750C for annealing times ranging from 10s to 1h.

Modelling the Suppression of Boron Transient Enhanced Diffusion in Silicon by Substitutional Carbon Incorporation. J.L.Ngau, P.B.Griffin, J.D.Plummer: Journal of Applied Physics, 2001, 90[4], 1768-78