Two-dimensional B diffusion was investigated on sub-micron patterned samples which had been implanted with 1keV B ions and diffused at 1100C for various times. The carrier profiles were measured by scanning capacitance microscopy, with the depth and lateral resolutions being enhanced by using double-bevelling sample preparation. Implantation into patterned wafers, with several stripe widths ranging from 0.5 to 5μm, was performed using 2 doses (1014 or 1015/cm2). It was found that enhanced transient B diffusion was strongly reduced with decreasing feature size, depending upon the implanted dose. This behaviour was attributed to the effect of Si self-interstitials upon B transient diffusion.

Two-Dimensional Boron Diffusion Determination by Scanning Capacitance Microscopy. F.Giannazzo, V.Raineri, F.Priolo: Materials Science and Engineering B, 2002, 91-92, 220-3