A method for completely suppressing the transient enhanced diffusion of B implanted in pre-amorphized Si was demonstrated. The B was implanted into a molecular beam epitaxially grown Si sample that had previously been amorphized by Si implantation. The sample was then annealed in order to epitaxially re-grow the amorphous layer and electrically activate the dopant. The back-flow of Si interstitials released by the pre-amorphization end-of-range damage was completely trapped by a C-rich Si layer interposed by molecular beam epitaxy between the damage and the implanted B. No appreciable transient enhanced diffusion was observed in the samples up to complete dissolution of the end-of-range damage, and complete electrical activation was obtained. The method might be considered for the realization of ultra-shallow junctions for the far future complementary metal–oxide–semiconductor technology nodes.

Complete Suppression of the Transient Enhanced Diffusion of B Implanted in Preamorphized Si by Interstitial Trapping in a Spatially Separated C-Rich Layer. E.Napolitani, A.Coati, D.De Salvador, A.Carnera, S.Mirabella, S.Scalese, F.Priolo: Applied Physics Letters, 2001, 79[25], 4145-7