The B diffusion was carried out for 4 types of Si-on-insulator structure at 860C in a N2 ambient. Simulations were carried out in order to clarify the mechanism of B diffusion retardation. It was found that the diffusion depth depended upon the recombination velocity of interstitial Si at the BOX interface, and the annihilation rate of ISi at defects in the active layer.

Boron Diffusion Profiles in Ultrathin Silicon-on-Insulator Structures and Their Relation to Crystalline Quality. H.Uchida, M.Ichimura, E.Arai: Japanese Journal of Applied Physics - 1, 2002, 41[7A], 4436-41