The role played by di-B diffusion in the evolution of diffusion profiles was investigated. It was found that Bs–Bi pair-diffusion could become as important as B-interstitial Bs–Sii pair-diffusion when both the B concentration and the annealing temperature were very high; leading to concentration-dependent B diffusion. Simulated B diffusion profiles, with marked shouldering, were in excellent agreement with experiments on the 1200C post-implantation annealing of material implanted with 500eV B-ions to more than 1019/cm3.

Shouldering in B Diffusion Profiles in Si - Role of Di-Boron Diffusion. G.S.Hwang, W.A.Goddard: Applied Physics Letters, 2003, 83[17], 3501-3