Boron diffusion in samples with a high surface concentration was simulated in terms of the dual pair mechanism. The calculations were compared with experimental data and simulations. It was shown that the proposed model permitted the description of the concentration profiles and of the concentration dependence of the B diffusivity at 800 to 1100C.

Simulation of the Concentration Dependence of Boron Diffusion in Silicon. O.V.Aleksandrov: Semiconductors, 2004, 38[3], 258-61