It was noted that current models of transient enhanced diffusion relied upon detailed simulations of the complex diffusion-reaction network that governed transient enhanced diffusion, and often depended upon fitted parameters of uncertain value. A more rigorous set of rate parameters, obtained from a maximum likelihood estimation, was used here in order to develop a relatively simple analytical treatment of B transient enhanced diffusion. The latter was capable of estimating the degree of profile spreading and the temperature at which transient enhanced diffusion would begin to occur to a significant extent.

A Simplified Picture for Transient Enhanced Diffusion of Boron in Silicon. M.Y.L.Jung, R.Gunawan, R.D.Braatz, E.G.Seebauer: Journal of the Electrochemical Society, 2004, 151[1], G1-7