The role which was played by F in reducing the self-interstitial population in a pre-amorphized layer during heat thermal treatment was explained. Here, a B-spike layer, grown by molecular-beam epitaxy, was used as a marker for the self-interstitial local concentration. The amorphized samples were then implanted with 100keV F-ions to 7 x 1012, 7 x 1013 or 4 x 1014/cm2, and recrystallized by solid-phase epitaxy. Annealing at 750 or 850C induced the release of self-interstitials from the end-of-range defects and provoked the transient enhanced B diffusion. It was shown that the incorporation of F reduced B enhanced diffusion in a controlled manner; right up to its complete suppression. It was seen that no direct interaction between B and F occurred, although the suppression of B enhanced diffusion was related to the ability of F to reduce the excess of Si self-interstitials which was emitted by the end-of-range source.

Role of Fluorine in Suppressing Boron Transient Enhanced Diffusion in Pre-Amorphized Si. G.Impellizzeri, J.H.R.dos Santos, S.Mirabella, F.Priolo, E.Napolitani, A.Carnera: Applied Physics Letters, 2004, 84[11], 1862-4