It was recalled that several models had been proposed for the simulation of B diffusion during annealing, after implantation into Si. It had been shown that transient enhanced diffusion tended to disappear at sub-keV implant energies. Under these conditions, the B concentration was higher than the B solubility limit and precipitation phenomena occurred. Extended defect ({311}) formation and B precipitation affected both redistribution during annealing and activation of the B. An investigation was therefore made here of the diffusion of low-energy B implanted into crystalline Si, and a complete simulation program was tested which took account of the effects of type-I defects, as a sink for self-interstitials, and of B precipitation. Experimental results were simulated and consistent parameters were found which fitted the data.

Diffusion Simulations of Boron Implanted at Low Energy (500eV) in Crystalline Silicon. L.Ihaddadene-Le Coq, J.Marcon, A.Dush-Nicolini, K.Masmoudi, K.Ketata: Nuclear Instruments and Methods in Physics Research B, 2004, 216, 303-7