Dopant-defect interactions during ion implantation were investigated by monitoring the radiation-enhanced diffusion of B dopant diffusion markers. The radiation-enhanced diffusion of these markers was investigated as a function of implantation temperature (25 to 400C), dose (1014 to 1016/cm2) and energy (2MeV or 40keV). The experimental results were interpreted with the aid of atomistic simulations that included detailed defect-defect and dopant-defect interactions. It was demonstrated that the radiation-enhanced diffusion of B occurred at lower temperatures (below 100C) than had previously been reported, and that the magnitude of this effect increased with implantation temperature and dose. It was also demonstrated that radiation-enhanced diffusion of the dopants was measurable only within the damage cascades of the implanted ions. That is, there was no observable long-range diffusion of defects during implantation. The simulations demonstrated that the formation and dissolution of defect clusters during implantation played an important role in observed temperature- and dose-dependences.

Radiation-Enhanced Diffusion of Sb and B in Silicon during Implantation below 400C. V.C.Venezia, L.Pelaz, H.J.L.Gossmann, A.Agarwal, T.E.Haynes: Physical Review B, 2004, 69[12], 125215 (8pp)