Numerical simulations were used to investigate the effects that band-bending could have upon the dopant profiles that evolved during transient enhanced diffusion during post-implantation annealing. In the case of B, band bending caused significant junction deepening because the near-interface electric field repelled charged interstitials from the interface. Band-bending also provided a mechanism which explained the pile-up of electrically active B within about 1nm of the interface. The results suggested that conflicting views, regarding the capacity of the interface to absorb interstitials, could be rationalized by a modest inherent absorbing capability; coupled with band bending.

Effect of Near-Surface Band Bending on Dopant Profiles in Ion-Implanted Silicon. M.Y.L.Jung, R.Gunawan, R.D.Braatz, E.G.Seebauer: Journal of Applied Physics, 2004, 95[3], 1134-40