It was noted that transient enhanced diffusion during the annealing of B-implanted material greatly impeded the formation of optimum junctions. Detailed modeling of transient enhanced diffusion was therefore often used in the design of annealing procedures. Model validation depended mainly upon fitting experimental dopant profiles, but the development of a unique set of rate parameters with predictive capability was difficult. A parameter-sensitivity analysis, using the finite difference method, was used here to show that those activation energies which were most important to know accurately were those for interstitial B diffusion, kick-in and dissociation of the (Bs–Sii)+ complex to liberate either interstitial B (kick-out) or Si. Maximum likelihood estimation was also applied to the interstitial cluster formation in order to determine the most likely set of activation energies for cluster dissociation.

Parameter Sensitivity Analysis Applied to Modeling Transient Enhanced Diffusion and Activation of Boron in Silicon. R.Gunawan, M.Y.L.Jung, R.D.Braatz, E.G.Seebauer: Journal of the Electrochemical Society, 2003, 150[12], G758-65