A study was made of a superlattice structure of C spikes (10nm wide, 100nm apart, C concentration greater than 1019/cm3) which had been grown epitaxially by molecular beam epitaxy. The samples were annealed at between 680 and 850C. The diffusive behavior of C was monitored by means of secondary ion mass spectrometry. The C diffusion profiles which were observed at above 800C exhibited a highly non-regular behavior. The diffusion results were explained in terms of a kick-out mechanism.

Carbon Diffusion in Silicon P.Werner, H.J.Gossmann, D.C.Jacobson, U.Gösele: Applied Physics Letters, 1998, 73[17], 2465-7