Transient ion drift experiments were used to obtain values for the intrinsic Cu diffusivity. On the basis of these measurements, Cu diffusion was found to be described by:

D (cm2/s) = 3.0 x 10-4 exp[-0.18(eV)/kT]

It was shown that the commonly used Hall-Racette expression gave an effective diffusion coefficient for heavily B-doped Si and could not be used for other doping levels or be extrapolated to lower temperatures. A model was developed which predicted the effective diffusion coefficient as a function of temperature, doping level and type of dopant.

Intrinsic Diffusion Coefficient of Interstitial Copper in Silicon A.A.Istratov, C.Flink, H.Hieslmair, E.R.Weber, T.Heiser: Physical Review Letters, 1998, 81[6], 1243-6