A systematic investigation of the diffusion of Fe was carried out. The element was implanted into wafers as low-dose impurity, and then post heat-treatment of the ion-implanted sample was conducted at various temperatures for a specific time. Following annealing, the depth profile was obtained by secondary ion mass spectrometry.

Secondary Ion Mass Spectrometry Characterization of the Diffusion Properties of 17 Elements Implanted into Silicon. H.Francois-Saint-Cyr, E.Anoshkina, F.Stevie, L.Chow, K.Richardson, D.Zhou: Journal of Vacuum Science and Technology B, 2001, 19[5], 1769-74