A small block of Ga was placed on a Si(111)-(7 x 7) surface at 175C, and structural changes caused by the surface diffusion of Ga from the block were investigated by using scanning tunnelling microscopy to clarify the reaction behavior of Ga on an Si(111)-(7 x 7) surface.

Surface Structure Changes Associated with Ga Diffusion on Si(111)7 x 7 Surface. T.Onodera, T.Ichikawa, A.Mizoguchi: Journal of Crystal Growth, 2002, 237-239, 192-5