The diffusion of H in Czochralski-grown material, with and without N, was studied. It was shown that the H penetration depth, during wet chemical etching, into N-doped samples was larger than that into Si without N. That was explained by the N effect upon the formation of O-related traps for H.

Study of Nitrogen-Related Defects by Means of Gold and Hydrogen Diffusion Investigations. A.L.Parakhonsky, E.B.Yakimov, D.Yang: Microelectronic Engineering, 2003, 66[1-4], 379-84