The dynamics of D and H in p-type B-doped Si and n-type P-doped Si were studied by means of acoustic spectroscopy at 1 to 550K, using frequencies ranging from 1 to 30kHz. By combining anelastic relaxation and dichroism decay data, the relaxation rates of the H-B pair were found over 11 decades. There were clear signs of deviations from classical behavior at low temperatures. A complete absence of relaxation effects in P-doped Si confirmed that the H occupied back-bonding sites. Other measurements suggested that, in the latter material, the energy barrier which separated the 4 anti-bonding sites around Si might be quite high.

Hopping and Tunnelling of H(D) in Semiconductors. G.Cannelli, R.Cantelli, M.Capizzi, F.Cordero, A.Frova, E.Giovine, F.Trequattrini: Journal of Alloys and Compounds, 1997, 253-254[1-2], 356-9