The effect of the upper layer upon the uptake and release of D by a sample which had been implanted with O was studied by using thermal desorption methods. The D was incorporated into the buried oxide by disrupting Si-O bridging bonds. The data revealed that the top layer reduced the uptake at 1073K. It also retarded release, and moderate (1125K) and high (1400K) temperature retention was observed. It was suggested that release was accompanied by reconstruction of the Si-O bonds, and that the bare oxide surface represented an abundant source of defects; thus enhancing the generation and elimination of Si-O bridging-bond defects.

Effect of a Top Layer of Silicon Implanted with Oxygen upon the Uptake and Release of Deuterium L.Zimmermann, J.M.M.De Nijs, P.F.A.Alkemade, K.Westerduin, A.Van Veen: Applied Physics Letters, 1998, 73[6], 774-6