The H was incorporated into p-type Czochralski material by H-plasma exposure, and H-enhanced thermal donor formation was achieved. Post-hydrogenation annealing treatments, with and without an electric field, were carried out. The H diffusion after post-hydrogenation annealing was investigated by spreading resistance measurements and the diffusivities were determined. Direct evidence for the presence of the positive charge state of H in p-type Si was established by the dependence of H diffusion upon the electric field. The conversion from neutral and positively charged hydrogen (H0 and H+) into negatively charged hydrogen H– was considered.

Dependence of Hydrogen Diffusion on the Electric Field in p-Type Silicon. Y.L.Huang, B.Wdowiak, R.Job, Y.Ma, W.R.Fahrner: Journal of the Electrochemical Society, 2004, 151[9], G564-7