Hydrogen-related effects in Si with radiation defects were considered. The first effect was the defect-related out-diffusion of H from an implanted layer. The second one was the saturation with H of some layers in neutron-irradiated Si, during its boiling in pure water.

Defect-Related Diffusion of Hydrogen in Silicon. I.V.Antonova, A.Misiuk, C.A.Londos, A.Barcz, E.N.Vandyshev, J.Bak-Misiuk, K.S.Zhuravlev, M.Kaniewska: Physica B, 2003, 340-342, 659-63