The effect of annealing at up to 1400K, under Ar pressures of up to 1.2GPa, upon H plasma-etched and H-implanted Czochralski or float-zone single- or polycrystalline material was investigated by using secondary ion mass spectrometry, X-ray, transmission electron microscopic and photoluminescence methods. The presence of an external stress during the annealing of H-containing material resulted in the suppression of H out-diffusion, but caused pronounced diffusion into the sample.

Effect of Annealing at Argon Pressures of up to 1.2GPa on Hydrogen Plasma-Etched and Hydrogen-Implanted Single-Crystalline Silicon. A.Misiuk, J.Bak-Misiuk, A.Barcz, A.Romano-Rodriguez, I.V.Antonova, V.P.Popov, C.A.Londos, J.Jun: International Journal of Hydrogen Energy, 2001, 26[5], 483-8