The effect of annealing at up to 1550K under Ar pressure up to 1.5GPa high-temperature high pressure treatment on Si implanted with He, H or O (Si:He, Si:H or Si:O) was investigated by X-ray, secondary ions mass spectrometry, transmission electron microscopy, photoluminescence and electrical methods. The high-temperature high-pressure treatment of Si:He results in decrease of defect concentration. The treatment at 720K, 1.1GPa for 10h resulted in unchanged strain (while annealing at 720K, 105Pa resulted in its marked decrease) and in an enhancement of the thermal donor (TD) concentration. A similar treatment of Si:H resulted in suppression of H out-diffusion with its pronounced diffusion into sample depth and stress-stimulated creation of small defects/TD. Generation of dislocations was strongly suppressed in the high-temperature high-pressure treated Si:O samples. The observed effects were explained accounting for HP-induced suppression of He and H out-diffusion from Si:He and Si:H, and for a decrease of misfit at the O-precipitate/Si boundary in Si:O.

Effect of Uniform Stress on Silicon Implanted with Helium, Hydrogen and Oxygen. A.Misiuk, J.Bak-Misiuk, I.V.Antonova, V.Raineri, A.Romano-Rodriguez, A.Bachrouri, H.B.Surma, J.Ratajczak, J.Katcki, J.Adamczewska, E.P.Neustroev: Computational Materials Science, 2001, 21[4], 515-25