The results of investigation of evolution equations system describing H passivation of Si were presented. Using Lie group theory the classification of invariant solutions and initial system reduction to systems of ordinary differential equations was carried out for admissible infinitesimal operators under constant H-atom diffusivity in the sample. Possibility of analytical solution of passivation problem was shown. Analysis of system behavior taking into account diffusion and dissociation mechanisms was performed. It was ascertained that free H atoms diffusion in the sample and `defect-H' dissociation spoil passivation. Analytical dependences obtained make it possible to predict spatial and time defect distribution under H passivation of Si depending on experimental conditions.

Modeling of Hydrogen Passivation Process of Silicon for Solar Cell Applications. Z.T.Kuznicki, R.Ciach, P.M.Gorley, M.V.Voznyy: Nuclear Instruments and Methods in Physics Research B, 2001, 178[1-4], 196-9