Layers of n-type material, with high carrier concentrations, were formed by high-dose (1015 to 1016/cm2) As ion implantation and annealing (950C). The n-type layers, which contained many As clusters were exposed to radio-frequency H plasma for 0.5h. While hydrogenated samples exhibited the same As atom concentration profile as did as-annealed samples, the carrier concentration profiles approached the As atom concentration profile with increasing substrate temperature. The activation energy which was deduced from an Arrhenius plot of the carrier concentration agreed well with that of H diffusivity. The increase in carrier concentration was therefore concluded to be the result of H atom reaction with As clusters.

Hydrogenation of High-Concentration Arsenic-Doped Silicon Using Radio Frequency Hydrogen Plasma. K.Yokota, K.Hosokawa, K.Terada, K.Hirai, H.Yakano, M.Kumagai, Y.Ando, K.Matsuda: Japanese Journal of Applied Physics - 1, 1997, 36[7A], 4355-8