A study was made of the susceptibility of In to transient. enhanced diffusion that was caused by ion implantation damage. It was found that In diffusion was markedly enhanced by a source of interstitials, and that the degree of enhancement was comparable to that seen for B. However, In was preferred as a channel dopant; not because of its diffusion behavior but rather because a narrow ion-implanted distribution could be obtained by using a heavy ion.

Indium Transient Enhanced Diffusion P.B.Griffin, M.Cao, P.Vande Voorde, Y.L.Chang, W.M.Greene: Applied Physics Letters, 1998, 73[20], 2986-8