A study was made of the fundamental features of N diffusion. The N was implanted as 40 or 200keV N2+, into Czochralski wafers through a screen oxide, to a dose of 5 x 1013/cm2. Furnace annealing at 650 to 1050C revealed an anomalous diffusion behavior. In the case of 40keV implants, the N diffused very rapidly and segregated at the Si/oxide interface. Qualitative modelling of the behavior was considered in terms of the time required to create a mobile N interstitial via the kick-out, Frenkel pair and dissociative mechanisms.

Diffusion of Implanted Nitrogen in Silicon L.S.Adam, M.E.Law, K.S.Jones, O.Dokumaci, C.S.Murthy, S.Hegde: Journal of Applied Physics, 2000, 87[5], 2282-4