Implantation of N was performed into wafers of variable purity: epitaxial layers, float-zone and Czochralski. A reported diffusion behavior of N, where N diffused for several μm at temperatures as low as 750C and the profiles assumed a so-called double-peak structure, was peculiar to Czochralski material. In pure epitaxial material, the N was immobile at low temperatures but, at 850C, the broadening of the N profile never assumed the shape observed in Czochralski material. The results suggested that O determined the shape of the N diffusion profiles.

Effect of Oxygen on the Diffusion of Nitrogen Implanted in Silicon. G.Mannino, V.Privitera, S.Scalese, S.Libertino, E.Napolitani, P.Pichler, N.E.B.Cowern: Electrochemical and Solid-State Letters, 2004, 7[8], G161-3