Studies of both systematic experiments and detailed simulations for examining the effects of N2+ implant on channel dopants were described. Step-by-step monitor wafer experiments clearly confirmed the N-induced transient enhanced diffusion of dopants. Process simulations within the "+1" N2+ profile approach demonstrated the need to scale down the +1 model parameter for matching the measured depth profiles. The underlying mechanism for the reduced +1 model parameter was that N which diffused toward the Si surface became a sink for the interstitials. These combined studies also showed that N-induced transient enhanced diffusion of dopants increased with N2+ dose.

Nitrogen-Induced Transient Enhanced Diffusion of Dopants. C.Murthy, K.Lee, R.Rengarajan, O.Dokumaci, P.Ronsheim, H.Tews, S.Inaba: Applied Physics Letters, 2002, 80[15], 2696-8