By means of deep-level transient spectroscopy, the diffusion profiles of substitutional Ni atoms were investigated in dislocation-free samples at 980C, for the in-diffusion process, and at 950C for the annealing process. The results were analyzed on the basis of the dissociative mechanisms of diffusion. It was shown that Ni distribution in dislocation-free Si could be explained by the dissociative mechanism; assuming that sinks and sources of vacancies were present in the bulk in addition to the surface.

Distribution of Substitutional Nickel Atoms in Dislocation-Free Silicon Studied by Deep Level Transient Spectroscopy and Theoretical Analyses Based on the Dissociative Mechanism of Diffusion. S.Tanaka, T.Ikari, H.Kitagawa: Japanese Journal of Applied Physics - 1, 2002, 41[11A], 6305-9