Ions of O were implanted into (100) monocrystalline material in order to form separation-by-implanted-O substrates. The 80keV ions were implanted to a dose of 1018/cm2, while maintaining the substrate temperature at about 520C. Before and after post-implantation annealing (650 to 1280C, 2h), the Si-on-insulator structures were examined by using X-ray photo-electron spectroscopy, Fourier-transform infra-red absorption spectroscopy, cross-sectional transmission electron microscopy, and Rutherford back-scattering spectroscopy. On the basis of the experimental results (depth profiles of O concentration and Si2p spectrum around the binding energy of 99 to 105eV, peak position and full-width at half-maximum of the absorption peak associated with the Si-O stretching mode at about 1080/cm), it was deduced that inward migration of the implanted O atoms was one of the main processes involved in formation of the Si-on-insulator structure.

Redistribution Process of Oxygen Atoms in Separation-by-Implanted-Oxygen (SIMOX) Substrates. A.Yoshino, K.Kasama: Japanese Journal of Applied Physics - 1, 1998, 37[2], 471-8