Computer simulations of the generation kinetics of thermal double-donors in Czochralski-type material were compared with experimental data for samples which had been heat-treated at between 350 and 420C for up to 500h. The experimental data were obtained by using Fourier-transform infra-red spectroscopy. A model which assumed sequential generation of thermal double-donors, and a fast-diffusing O dimer was found to reproduce quantitatively the experimental data. The diffusivity of the O dimer was estimated to be some 106 times that of interstitial O at 400C, and could be described by:

D (cm2/s) = 3 x 10-4 exp[-1.3(eV)/kT]

The value of the pre-exponential factor was very close to that for the jump frequency of interstitial O.

Kinetic Study of Oxygen Dimer and Thermal Donor Formation in Silicon D.Aberg, B.G.Svensson, T.Hallberg, J.L.Lindström: Physical Review B, 1998, 58[19], 12944-51