Published data on O precipitate-densities in Czochralski-type material, following multi-step annealing, were compared with the predictions of a coupled-flux model for time-dependent nucleation. This was considered to be a more correct model for diffusion-controlled nucleation, than was the classical theory, because it directly coupled the 2 stochastic fluxes of interfacial attachment and long-range diffusion. Quantitative agreement was obtained between the measured and calculated densities for nucleation temperatures greater than 650C. Good agreement was obtained for lower temperatures when the O diffusion rate was assumed to be higher than that predicted on the basis of high-temperature diffusion data. The diffusion coefficients which were deduced from nucleation data were in good agreement with the results of dislocation-unlocking experiments. The O loss which was calculated from coupled-flux nucleation and diffusion-limited growth agreed with experimental observations. The equations of classical nucleation theory predicted a much greater O loss; thus reflecting the failure of the theory to treat nucleation correctly when long-range diffusion was important, as in most solid-state precipitation processes.

Coupled-Flux Nucleation Modelling of Oxygen Precipitation in Silicon. P.F.Wei, K.F.Kelton, R.Falster: Journal of Applied Physics, 2000, 88[9], 5062-70