In-diffusion profiles of P were simulated on the basis of an integrated diffusion model that took account of the vacancy mechanism, the kick-out mechanism and the Frank-Turnbull mechanism. The simulations were performed using only 3 parameters; each of which had a clear physical meaning and a physically reasonable value, with no additional  ad hoc  hypothesis. These parameters corresponded to the diffusion of dopant species and of the point defects that contributed to dopant diffusion. In the case of an anomalous P diffusion profile, a vacancy mechanism governed diffusion in the plateau region, while a kick-out mechanism governed diffusion in deeper regions, where self-interstitials predominated in the kink region and P interstitials predominated in the tail region. This change-over from a vacancy contribution to a kick-out contribution was shown to be the mechanism for the appearance of P kink-and-tail profiles.

Simulation of Boron, Phosphorus and Arsenic Diffusion in Silicon-Based on an Integrated Diffusion Model, and the Anomalous Phosphorus Diffusion Mechanism. M.Uematsu: Journal of Applied Physics, 1997, 82[5], 2228-46