Pre-deposition profiles of P in bulk Si were measured and diffusion parameters used to simulate the profiles were extracted by using a simulator. The pre-deposition was carried out under such conditions that the surface concentration reached the solid solubility. It was systematically determined whether experimental profiles under other conditions could be successfully simulated. Experimental results for both P diffusion showed that a retardation of profiles of pre-deposition in SOI, as compared with those in bulk Si, was observed at 870C but not at 970C. The retardation of profiles of drive-in diffusion in SOI was observed at 870C in O2 atmosphere but not in a N2 atmosphere and not at 970C in either atmosphere. The comparison of experimental profiles with simulated ones showed that the simulated drive-in profiles in bulk Si and SOI were shallower than the experimental profiles at both temperatures; regardless of the atmosphere. This discrepancy between experimental and simulated drive-in profiles suggested that some effect that enhanced drive-in diffusion operated in P diffusion.

Applicability of Phosphorus and Boron Diffusion Parameters Extracted from Predeposition to Drive-in Diffusion for Bulk Silicon and Silicon-on-Insulator. E.Arai, D.Iida, H.Asai, Y.Ieki, H.Uchida, M.Ichimura: Japanese Journal of Applied Physics - 1, 2003, 42[4A], 1503-10