The bulk boundary-condition for the numerical solution of P diffusion problems, which was based upon the pair-diffusion model for vacancies, was studied. The zero concentration-gradient condition for vacancies in a region that was more than twice as deep as the P diffusion depth could be used instead of the equilibrium concentration condition for vacancies at infinity. The zero concentration-gradient condition was applicable to diffusion equations which were based upon pair-diffusion models for vacancy and interstitialcy mechanisms.

Bulk Boundary Condition for the Numerical Solution of Simultaneous Diffusion Equations for Phosphorus and Point Defects in Silicon M.Yoshida, M.Takahashi, H.Tomokage: Japanese Journal of Applied Physics - 1, 1999, 38[1A], 36-7