It was assumed that the interstitial P atom, Pi, and a self-interstitial, I, were of interstitialcy type. One bond-type migration was applied to their behavior. It was concluded that there was essentially no difference between the migration of a Pi-I pair, via the interstitialcy mechanism, and between the chemical processes for the formation-dissociation of the Pi-I pairs and the kick-out mechanism of Pi.

One-Bond Type Migration of Phosphorus in Silicon via an Interstitialcy Mechanism M.Yoshida, Y.Kamiura, R.Tsuruno, M.Takahashi, H.Tomokage: Japanese Journal of Applied Physics - 1, 1998, 37[12A], 6376-7