The effect of nitride films upon the diffusion of P was investigated in order to deduce the fractional interstitialcy component of their diffusivity. The nitride films, when deposited onto the Si substrate, acted as an extrinsic source of vacancies. It was found that P diffusion was retarded under the nitride film. By monitoring variations in the retardation and enhancement, it was deduced that the interstitialcy component of P diffusion was approximately 0.96.

Fraction of Interstitialcy Component of Phosphorus and Antimony Diffusion in Silicon T.Shimizu, T.Takagi, S.Matsumoto, Y.Sato, E.Arai, T.Abe: Japanese Journal of Applied Physics - 1, 1998, 37[3B], 1184-7