The transient enhanced diffusion of high-concentration P during post-implantation annealing was simulated. The simulations were based upon models for P diffusion, for transient enhanced diffusion by self-interstitial clusters and for end-of-range dislocations as both sinks and sources of self-interstitials. Account was taken of P clustering and P pile-ups. The P clustering was taken into account only beneath end-of-range dislocations, and P pile-up was estimated by incorporating a diffusion-segregation term into the diffusion equations. The P depth-profiles at high doses (1015/cm2) were satisfactorily fitted for a wide range of annealing conditions (700 to 1000C).

Simulation of High-Concentration Phosphorus Diffusion in Silicon Taking into Account Phosphorus Clustering and Pile-Up M.Uematsu: Japanese Journal of Applied Physics - 1, 1999, 38[11], 6188-92